GA200SA60UP Datasheet, PDF (3/8 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

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GA200SA60UP
Vishay Semiconductors
200
Triangular wave:
160
I
Clamp voltage:
120
80 % of rated
For both:
Duty cycle: 50 %
T_J = 125 °C
T_sink = 90 °C
Gate drive as specified
Power dissipation = 140 W
80
Square wave:
40
60 % of rated
voltage
I
Ideal diodes
0
0.1
1
10
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of Fundamental)
1000
200
150
100 T_J = 150 °C
T_J = 25 °C
V_GE = 15 V
20 µs pulse width
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_CE - Collector to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
T_J = 150 °C
T_J = 25 °C
100
V_GE = 25 V
5 µs pulse width
10
5.0
6.0
7.0
8.0
VGE - Gate to Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
50
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
3
V_GE = 15 V
80 µs pulse width
I_C = 400 A
I_C = 200 A
2
I_C = 100 A
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J - Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 26-Oct-11
3
Document Number: 94364
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