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GA200SA60UP Datasheet, PDF (1/8 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
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GA200SA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) (typical)
VGE
IC
600 V
1.92 V
15 V
100 A
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 VAC/RMS)
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
Reverse voltage avalanche energy
RMS isolation voltage
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
VGE
EARV
VISOL
PD
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 2.0 ,
See fig. 13a
Repetitive rating; pulse width limited
by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
6-32 or M3 screw
MAX.
600
200
100
400
400
± 20
160
2500
500
200
- 55 to + 150
1.3 (12)
UNITS
V
A
V
mJ
V
W
°C
Nm
(lbf in)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case
Case to sink, flat, greased surface
Weight of module
RthJC
RthCS
TYP.
-
0.05
30
MAX.
0.25
-
-
UNITS
°C/W
g
Revision: 26-Oct-11
1
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000