70MT060WSP Datasheet, PDF (6/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC

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250
200
150
T_C = 125 °C
100
T_C = 25 °C
50
0
3
4
5
6
7
8
93410_10
V_GE (V)
Fig. 10 - Typical IGBT Transfer Characteristics, T_J = 125 °C
1
T_C = 125 °C
0.1
0.01
T_C = 25 °C
0.001
100
200
300
400
500
600
93410_11
V_CES (V)
Fig. 11 - Typical IGBT Zero Gate Voltage Collector Current
4.5
4.0
T_C = 25 °C
3.5
3.0
T_C = 125 °C
2.5
2.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
93410_12
I_C (mA)
Fig. 12 - Typical IGBT Gate Thresold Voltage
70MT060WSP
Vishay Semiconductors
100
90
80
70
60
T_J = 125 °C
50
40
T_J = 150 °C
30
20
10
T_J = 25 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
93410_13
V_F - Anode to Cathode
Forward Voltage Drop (V)
Fig. 13 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode, t_p = 500 μs
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
93410_14
I_F - Continuous Forward Current (A)
Fig. 14 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
100
90
80
70
T_J = 150 °C
60
T_J = 125 °C
50
40
30
T_J = 25 °C
20
10
0
0.25 0.75 1.25 1.75 2.25 2.75 3.25 3.75
93410_15
V_F - Forward Voltage Drop (V)
Fig. 15 - Typical PFC Diode Forward Voltage
Revision: 07-Sep-11
6
Document Number: 93410
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