70MT060WSP Datasheet, PDF (5/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC

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10
1
0.1
Steady state value
R_thJC = 0.9 °C/W
(DC operation)
70MT060WSP
Vishay Semiconductors
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
93410_05
t₁ - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Input Bridge Thermal Impedance Z_thJC Characteristics (Per Junction)
160
140
120
100
80
60
40
20
0
0
20
40
60
80 100 120
93410_06
I_D - Continuous Collector Current (A)
Fig. 6 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
1000
100
10
1
0.1
0.01
1
10
100
1000
93410_07
V_CE (V)
Fig. 7 - IGBT Reverse BIAS SOA T_J = 150 °C, V_GE = 15 V
250
200
V_GE = 18 V
150
V_GE = 15 V
V_GE = 12 V
V_GE = 9 V
100
50
0
0
1
2
3
4
5
93410_08
V_CE (V)
Fig. 8 - Typical IGBT Output Characteristics, T_J = 25 °C
250
200
V_GE = 18 V
150
V_GE = 15 V
V_GE = 12 V
100
V_GE = 9 V
50
0
0
1
2
3
4
5
93410_09
V_CE (V)
Fig. 9 - Typical IGBT Output Characteristics, T_J = 125 °C
Revision: 07-Sep-11
5
Document Number: 93410
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