70MT060WSP Datasheet, PDF (4/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC

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70MT060WSP
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNITS
Input Rectifier Bridge Junction to case diode thermal resistance
-
-
0.9
PFC IGBT
PFC Diode
Junction to case IGBT thermal resistance
Junction to case PFC diode thermal resistance
-
R_thJC
-
-
0.33
°C/W
-
0.69
AP Diode
Junction to case AP diode thermal resistance
-
-
3.92
Case to sink, flat, greased surface per module
Mounting torque ± 10 % to heatsink ⁽¹⁾
R_thCS
-
0.06
-
°C/W
-
-
4
Nm
Approximate weight
-
65
-
g
Notes
• A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound. Lubricated threads.
160
140
120
100
80
180°
(Rect.)
60
180°
(Sine)
40
20
0
0 10 20 30 40 50 60 70 80 90 100
93410_01
Average Output Current (A)
Fig. 1 - Single Phase Input Bridge Output
Current Ratings Characteristics
300
250
200
180°
150
(Sine)
180°
100
(Rect.)
50
0
0 10 20 30 40 50 60 70 80
93410_02
Total Output Current (A)
Fig. 2 - Single Phase Bridge On-State Power
Loss Characteristics
1000
100
T_J = 150 °C
10
T_J = 25 °C
1
0
1
2
3
93410_03
Instantaneous Voltage Drop (V)
Fig. 3 - Single Phase Input Bridge On-State
Voltage Drop Characteristics
325
300
275
250
225
200
175
150
125
100
75
50
0.01
At any rated load condition and with
rated V_RRM applied following surge.
Initial T_J = T_J max.
No voltage reapplied
Rated V_RRM reapplied
0.1
1
93410_04
Pulse Train Duration (s)
Fig. 4 - Single Phase Input Bridge Maximum
Non-Repetitive Surge Current (Per Junction)
Revision: 07-Sep-11
4
Document Number: 93410
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