70MT060WSP Datasheet, PDF (1/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC

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70MT060WSP
Vishay Semiconductors
MTP IGBT Power Module Primary Rectifier and PFC
MTP
PRODUCT SUMMARY
INPUT BRIDGE DIODE, T_J = 150 °C
V_RRM
1200 V
l_O at 80 °C
48 A
V_FM at 25 °C at 20 A
1.05 V
PFC IGBT, T_J = 150 °C
V_CES
600 V
V_CE(sat) at 25 °C at 40 A
1.93 V
I_C at 80°C
66 A
FRED Pt^® PFC DIODE, T_J = 150 °C
V_R
600 V
I_F(DC) at 80 °C
55 A
V_F at 25 °C at 40 A
1.76 V
FRED Pt^® AP DIODE, T_J = 150 °C
V_R
600 V
I_F(DC) at 80 °C
13 A
V_F at 25 °C at 4 A
1.1 V
FEATURES
• Input rectifier bridge
• PFC stage with warp 2 IGBT and FRED Pt^®
hyperfast diode
• Very low stray inductance design for high
speed operation
• Integrated thermistor
• Isolated baseplate
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Input
Rectifier
Bridge
Repetitive peak reverse voltage
Maximum average output current
T_J = 150 °C maximum
Surge current (Non-repetitive)
Maximum I²t for fusing
Collector to emitter voltage
Gate to emitter voltage
PFC IGBT
Maximum continuous collector current
at V_GE = 15 V, T_J = 150 °C maximum
Pulsed collector current
Clamped inductive load current
Maximum power dissipation
SYMBOL
V_RRM
TEST CONDITIONS
I_O
T_C = 80 °C
I_FSM
I²t
V_CES
V_GE
I_C
I_CM ⁽¹⁾
I_LM
P_D
Rated V_RRM applied
10 ms, sine pulse
T_J = 25 °C
I_GES max. ± 250 ns
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
MAX.
1200
48
250
316
600
± 20
96
66
250
250
378
UNITS
V
A
A²s
V
A
W
Revision: 07-Sep-11
1
Document Number: 93410
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000