English
Language : 

70MT060WSP Datasheet, PDF (2/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC
◁
www.vishay.com
70MT060WSP
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
PFC Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum power dissipation
Maximum non-repetitive peak current
Repetitive peak reverse voltage
AP Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum power dissipation
Maximum non-repetitive peak current
Maximum operating junction temperature
Storage temperature range
RMS isolation voltage
SYMBOL
VRRM
IF
PD
IFSM
VRRM
IF
PD
IFSM
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 25 °C
VRMS t = 1 s, TJ = 25 °C
MAX.
600
82
55
181
360
600
21
13
32
60
150
- 40 to + 150
3500
UNITS
V
A
W
A
V
A
W
A
°C
W
R CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
70MT060WSP 0.273 0.302 0.322 0.338 0.350 0.236 0.288 0.294 0.287 0.235
UNITS
°C/W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Input
Rectifier
Bridge
Blocking voltage
Reverse leakage current
Forward voltage drop
Forward slope resistance
Conduction threshold voltage
Collector to emitter
breakdown voltage
BVRRM
IRRM
VFM
rt
VT
BVCES
IR = 250 μA
VRRM = 1200 V
VRRM = 1200 V, TJ = 150 °C
IF = 20 A
IF = 20 A, TJ = 150 °C
TJ = 150 °C
VGE = 0 V, IC = 0.5 mA
Temperature coefficient of
breakdown voltage
VBR(CES)/TJ IC = 0.5 mA (25 °C to 125 °C)
PFC IGBT
PFC Diode
Collector to emitter voltage
Gate threshold voltage
Collector to emitter
leakage current
Gate to emitter leakage
Forward voltage drop
Blocking voltage
Reverse leakage current
AP Diode
Forward voltage drop
VCE(ON)
VGE(th)
ICES
IGES
VFM
BVRM
IRM
VFM
VGE 15 V, IC = 40 A
VGE = 15 V, lC = 40 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = ± 20 V
IF = 40 A
IF = 40 A, TJ = 125 °C
IR = 0.5 mA
VRRM = 600 V
VRRM = 600 V, TJ = 125 °C
IF = 4 A
IF = 4 A, TJ = 125 °C
MIN.
1200
-
-
-
-
-
-
600
-
-
-
2.9
-
-
-
-
-
600
-
-
-
-
TYP.
-
-
-
1.05
0.94
-
-
MAX. UNITS
-
V
0.1
mA
3.0
1.2
V
1.0
8.7 m
0.94 V
-
-
V
0.6
-
V/°C
1.93 2.15
V
2.30 2.55
-
5.6
V
-
0.1
mA
-
1
- ± 100 nA
1.76 2.23
1.34 1.62 V
-
-
-
75
μA
-
0.5 mA
1.1 1.28
V
0.95 1.09
Revision: 07-Sep-11
2
Document Number: 93410
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 ▷