70MT060WSP Datasheet, PDF (3/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC

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70MT060WSP
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
RECOVERY PARAMETER
PFC Diode
AP Diode
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
I_rr
I_F = 40 A
t_rr
dI/dt = 200 A/μs
Q_rr
V_R = 200 V
I_rr
I_F = 40 A, T_J = 125 °C
t_rr
dI/dt = 200 A/μs
Q_rr
V_R = 200 V
I_rr
I_F = 4 A
t_rr
dI/dt = 200 A/μs
Q_rr
V_R = 200 V
MIN. TYP. MAX. UNITS
-
4
7
A
-
59
79
ns
-
118 180 nC
-
12
17
A
-
127 170 ns
-
733 1200 nC
-
7
10
A
-
78 120 ns
-
290 600 nC
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
PFC IGBT
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Q_g
Q_gs
Q_gd
E_on
E_off
E_tot
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_tot
t_d(on)
t_r
t_d(off)
t_f
C_ies
C_oes
C_res
Reverse bias safe operating area RBSOA
I_C = 50 A
V_CC = 400 V
V_GE = 15 V
I_C = 70 A, V_CC = 360 V, V_GE = 15 V
R_g = 5 , L = 500 μH, T_J = 25 °C
I_C = 70 A, V_CC = 360 V, V_GE = 15 V
R_g = 5 , L = 500 μH, T_J = 125 °C
V_GE = 0 V
V_CC = 30 V
f = 1 MHz
I_C = 250 A, V_CC = 400 V, V_P = 600 V,
R_g = 22 , V_GE = 15 V, L = 500 μH,
T_J = 150 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
0.13
0.18
0.31
193
35
202
49
0.25
0.32
0.57
193
35
208
66
7430
530
94
MAX. UNITS
-
-
nC
-
-
-
mJ
-
-
-
ns
-
-
-
-
mJ
-
-
-
ns
-
-
-
-
pF
-
Full square
THERMISTOR ELECTRICAL CHARACTERISTICS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Resistance
B value
R
T_J = 25 °C
B
T_J = 25 °C/T_J = 85 °C
- 30 000
- 4000
Notes
• Repetitive rating; pulsed with limited by maximum junction temperature.
MAX.
-
-
UNITS

K
Revision: 07-Sep-11
3
Document Number: 93410
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