SI8809EDB Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
10
1
100 µs
1 ms
0.1
T_A = 25 °C
0.01
0.1
BVDSS Limited
1
10
10 ms
10 ms
10 s, 1s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Si8809EDB
Vishay Siliconix
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_{J (max.)} = 150 °C, using junction-to-ambient thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
S15-0346-Rev. C, 23-Feb-15
5
Document Number: 63301
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