SI8809EDB Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
100
I_D = 1.5 A
6
V_DS = 5 V
10
4
V_DS = 10 V
V_DS = 16 V
1
2
Si8809EDB
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
V_GS = 1.8 V, I_D = 0.5 A
1.3
V_GS = 4.5 V, 2.5 V, I_D = 1.5 A
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.8
0.7
0.6
I_D = 250 μA
0.5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.300
14
0.250
I_D = 1.5 A; T_J = 25 °C
12
0.200
I_D = 0.5 A; T_J = 125 °C
10
0.150
I_D = 1.5 A; T_J = 125 C
8
6
0.100 _{ID = 0.5 A; TJ = 25 °C}
4
0.050
2
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
S15-0346-Rev. C, 23-Feb-15
4
Document Number: 63301
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