SI8809EDB Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si8809EDB
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Dynamic ^b
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0, I_D = -250 μA
I_D = -250 μA
V_DS = V_GS , I_D = -250 μA
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 8 V
V= -20 V, V_GS = 0 V
V_DS = -20 V, V_GS = 0 V, T_J = 55 °C
V ≤ -10 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -1.5 A
V_GS = -2.5 V, I_D = -1.5 A
V_GS = -1.8 V, I_D = -0.5 A
V_DS = -10 V, I_D = -1.5 A
Total Gate Charge
Q_g
V_DS = -10 V, V_GS = -8 V, I_D = -1.5 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = -10 V, V_GS = -4.5 V, I_D = -1.5 A
Q_gd
Gate Resistance
Turn-On Delay Time
R_g
t_d(on)
f = 1 MHz
Rise Time
Turn-Off Delay Time
Fall Time
t_r
t_d(off)
t_f
V_DD = -10 V, R_L = 3.7 Ω
I_D ≅ -1.5 A, V_GEN = -4.5 V, R_g = 1 Ω
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = -10 V, R_L = 3.7 Ω
I_D ≅ -1.5 A, V_GEN = -8 V, R_g = 1 Ω
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
T_C = 25 °C
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
I_S = -1.5 A, V_GS = 0
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
I_F = -1.5 A,
di/dt = 100 A/μs, T_J = 25 °C
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
MIN.
-20
-
-
-0.4
-
-
-
-
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-9
2.1
-
-
-
-
-
-
0.075
0.097
0.125
8
-
-
-
-0.9
±1
± 10
-1
-10
-
0.090
0.119
0.155
-
V
mV/°C
V
μA
A
Ω
S
9.8
15
6
10
0.8
-
nC
1.85
-
10
-
Ω
15
30
20
40
30
60
10
20
ns
10
20
10
20
25
50
7
15
-
-0.7
A
-
-13
-0.8
-1.2
V
20
40
ns
10
20
nC
15
-
ns
5
-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0346-Rev. C, 23-Feb-15
2
Document Number: 63301
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000