SI8809EDB Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si8809EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4
10^-2
3.5
3
2.5
T_J = 25 °C
2
1.5
1
0.5
10^-3
10^-4
10^-5
10^-6
10^-7
10^-8
T_J = 150 °C
T_J = 25 °C
0
0
3
6
9
12
15
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-9
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
5
V_GS = 5 V thru 3 V
V_GS = 2.5 V
12
4
9
V_GS = 2 V
3
6
V_GS = 1.5 V
3
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
T_C = 25 °C
1
T_C = 125 °C
0
T_C = - 55 °C
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.30
800
0.25
V_GS = 1.8 V
600
0.20
0.15
0.10
0.05
0
0
V_GS = 2.5 V
V_GS = 4.5 V
3
6
9
12
15
I_D - Drain Current (A)
400
C_iss
200
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S15-0346-Rev. C, 23-Feb-15
3
Document Number: 63301
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