V23990-P829-F08-PM Datasheet, PDF (9/16 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 9.
Typical recovered charge as a f unction of collector current
Q r = f(I C)
16
FWD
Figure 10.
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(R gon)
12
Q_r
12
9
FWD
Q_r
8
6
Q_r
Q_r
4
3
At ⁰ ₀
20
40
At
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
60
T j:
80
25 °C
150 °C
100
I C (A)
Figure 11.
Typical peak reverse recovery current current as a f unct ion of collect or current
I RM = f(I C)
120
90
FWD
I_RM
I_RM
0
0
8
16
At
VCE=
600
V
V GE =
±15
V
I C=
50
A
24
32
25 °C
T j:
150 °C
40
Rgon (Ω)
Figure 12.
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(R gon)
160
FWD
120
60
30
I_RM
0
0
20
40
At
V CE = 600
V
V GE =
±15
V
R gon =
8
Ω
60
T j:
80
25 °C
150 °C
100
I C (A)
80
40
I_RM
0
0
8
16
At
V CE =
600
V
V GE =
±15
V
IC =
50
A
I_RM
I_RM
24
32
25 °C
T j:
150 °C
40
R go n (Ω)
Copyright Vincotech
9
27 Nov. 2015 / Revision 1