V23990-P829-F08-PM Datasheet, PDF (10/16 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 13.
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F/dt ,di rr/dt = f(I c)
6000
5000
di _F / dt
di_{r r}/dt
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(R g)
15000
di_F / dt
12000
di _{r r}/dt
4000
3000
2000
1000
9000
6000
3000
0
0
20
40
At
V CE = 600
V
V GE =
±15
V
R gon =
8
Ω
60
80
25 °C
T j:
150 °C
100
IC (A)
0
0
8
16
At
V CE =
600
V
V GE =
±15
V
I C=
50
A
24
32
25 °C
T j:
150 °C
40
Rg on (Ω)
Figure 15.
Reverse bias saf e operating area
I C = f(V CE)
120
100
I_{C MAX}
IGBT
80
60
40
20
0
0
200
400
600
At
Tj =
175
°C
R gon =
8
Ω
R goff =
8
Ω
800
1000
1200
1400
VC E (V)
Copyright Vincotech
10
27 Nov. 2015 / Revision 1