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V23990-P829-F08-PM Datasheet, PDF (11/16 Pages) Vincotech – Trench Fieldstop IGBT4 technology
V23990-P829-F08x-PM
datasheet
Inverter Switching Definitions
General conditions
Tj
R gon
= 150 °C
= 8Ω
R goff
= 8Ω
Figure 1.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
140
%
120
tdoff
VCE
100
VGE 90%
80
VCE 90%
60
VGE
IC
IGBT
40
tEoff
20
0
IC 1%
-20
-0,11
0,04
0,19
0,34
0,49
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
Figure 3.
- 15
V
15
V
600
V
50
A
0,281
µs
0,710
µs
Turn-of f Swit ching Wavef orms & def init ion of t f
125
%
fitted
IC
100
IC 90%
75
IC 60%
50
IC 40%
25
IC10%
0
tf
-25
0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45
V C (100%) =
I C (100%) =
tf =
600
V
50
A
0,122
µs
0,64
0,79
t (µs)
IGBT
VCE
0,5 0,55 0,6
t ( µs)
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
300
%
IC
250
IGBT
200
150
VCE
100
tdon
50
VGE 10%
0
VGE
IC 10%
VCE 3%
tEon
-50
2,85
2,94
3,03
3,12
3,21
3,3
3,39
3,48
t (µs)
V GE (0%) =
- 15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
50
A
t don =
0,101
µs
t Eon =
Figure 4.
0,345
µs
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
300
%
IC
250
200
150
VCE
100
50
0
tr IC 90%
IC 10%
-50
2,9
V C (100%) =
I C (100%) =
tr =
3
3,1
3,2
600
V
50
A
0,024
µs
3,3
3,4
t (µs)
Copyright Vincotech
11
27 Nov. 2015 / Revision 1