V23990-P829-F08-PM Datasheet, PDF (7/16 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 1.
Typical swit ching energy losses as a f unction of collector current
E = f(I C)
10
IGBT
Figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(rg)
10
8
E_on
8
E_off
6
6
EE_oofnf
4
4
2
2
IGBT
E_on
E_on
E_off
E_off
0
0
20
40
With an induc tive load at
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
60
T j:
80
25 °C
150 °C
Figure 3.
Typical reverse recovered energy loss as a f unction of collector current
E rec = f(I c)
6
5
100
I_C (A)
FWD
E_rec
4
3
2
E_rec
1
0
0
20
40
With an induc tive load at
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
60
T j:
80
25 °C
150 °C
100
I C (A)
0
0
8
16
With an inductive load at
V CE =
600
V
V GE =
±15
V
IC =
50
A
24
T j:
32
25 °C
150 °C
R_g ( Ω) ⁴⁰
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(r g )
5
FWD
4
E_rec
3
2
E_rec
1
0
0
8
16
With an inductive load at
V CE =
600
V
V GE =
±15
V
IC =
50
A
24
32
25 °C
T j:
150 °C
40
r_g (Ω)
Copyright Vincotech
7
27 Nov. 2015 / Revision 1