V23990-P829-F08-PM Datasheet, PDF (3/16 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-P829-F08x-PM
datasheet
Inverter Switch
Parameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Reverse transfer capac itance
Thermal
Thermal resistance junc tion to sink
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Characteristic Values
Symbol
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
rg
C _ies
f=1MHz
C _res
Conditions
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min
Value
Typ Max
Unit
25
0,0017
125
25
15
50
125
150
25
0
1200
125
25
20
0
125
0
25
25
5,3
5,8
6,3
V
1,58
1,88
2,07
V
2,30
1
µA
120
nA
4
Ω
2800
pF
100
ph a s e -cha ng e
R _th(j-s) material
ʎ=3,4W /mK
0,44
K/W
t d(on)
t_r
R goff = 8 Ω
R gon = 8 Ω
t d(off)
t_f
±15
600
50
E on
Q rFWD = 4,8 µC
Q _rFWD = 9,7 µC
E _off
25
150
25
150
25
150
25
150
25
150
25
150
96
101
17
24
214
281
87
122
2,701
4,211
2,744
4,531
ns
mWs
Copyright Vincotech
3
27 Nov. 2015 / Revision 1