V23990-P829-F08-PM Datasheet, PDF (8/16 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
IGBT
Figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(r g)
1
t_{d(off )}
t_f
0,1
0,1
t_d(on)
t_r
IGBT
t_{d(off )}
t_d(on)
t_f
t_r
0,01
0
20
40
60
With an induc tive load at
Tj=
150
°C
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
Figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,4
0,3
80
100
I _C (A)
FWD
t_rr
0,01
0
8
16
24
With an inductive load at
Tj=
150
°C
V CE =
600
V
V GE =
±15
V
IC =
50
A
Figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,8
0,6
32
40
r_g (Ω)
FWD
t_rr
0,2
0,4
t_rr
t_rr
0,1
0,2
0
0
20
40
At
V CE=
600
V
V GE =
±15
V
R gon =
8
Ω
60
80
25 °C
T j:
150 °C
100
I_C (A)
0
0
8
16
At
V CE =
600
V
V GE =
±15
V
IC =
50
A
24
32
25 °C
Tj:
150 °C
40
R_{g on} (Ω)
Copyright Vincotech
8
27 Nov. 2015 / Revision 1