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| V23990-P629-L63-PM Datasheet, PDF (9/19 Pages) Vincotech – High efficiency dual boost | |||
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V23990-P629-L63-PM
T1, T2
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
10000
dI0/dt
dIrec/dt
8000
D1, D2, D3, D4, D5, D6
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
10000
8000
D1, D2, D3, D4, D5, D6
dI0/dt
dIrec/dt
6000
6000
4000
4000
2000
2000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
700
V
15
V
4
â¦
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
60
I C (A)
80
T1, T2
0
0
4
8
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
40
A
15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
12
16 R Gon ( â¦) 20
D1, D2, D3, D4, D5, D6
100
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
At
D=
tp / T
Phase-Change Material
Thermal grease
RthJH =
0,65
K/W
RthJH =
IGBT thermal model values
0,79
K/W
Phase-Change Material
Thermal grease
R (C/W) Tau (s)
R (C/W) Tau (s)
0,173
0,561
0,208
0,561
0,381
0,125
0,459
0,125
0,078
0,010
0,094
0,010
-0,003
0,048
-0,004
0,048
0,026
0,001
0,032
0,001
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101
At
D=
tp / T
Phase-Change Material
Thermal grease
RthJH =
1,17
K/W
RthJH =
FWD thermal model values
1,36
K/W
Phase-Change Material
Thermal grease
R (C/W) Tau (s)
R (C/W) Tau (s)
0,043
9,803
0,050
9,80
0,101
0,815
0,118
0,82
0,383
0,098
0,445
0,10
0,308
0,026
0,358
0,03
0,233
0,005
0,271
0,01
0,098
0,001
0,114
0,00
copyright Vincotech
9
Revision: 1
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