V23990-P629-L63-PM Datasheet, PDF (6/19 Pages) Vincotech – High efficiency dual boost

V23990-P629-L63-PM
T1, T2
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
5
T1, T2
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
5
T1, T2
4
4
3
E_{off High T}
3
2
2
E_{off High T}
EE_oonffHLigohw
T
T
EEE_{oononffHLLigoohwwTTT}
1
E_{on Low T}
1
0
0
20
40
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
700
V
15
V
4
Ω
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,025
60
80
I C (A)
D1, D2, D3, D4, D5, D6
0
0
4
8
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
700
V
15
V
40
A
12
16 _{R G ( Ω )} 20
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,025
D1, D2, D3, D4, D5, D6
0,02
0,02
0,015
0,01
0,005
E_{rec Low T}
E_{rec High T}
0,015
0,01
0,005
E_{rec High T}
E_{rec Low T}
0
0
20
40
With an inductive load at
T_j =
25/125 °C
V_DS =
700
V
V_GS =
15
V
R_gon =
4
Ω
R_goff =
4
Ω
60
80
I C (A)
0
0
4
8
With an inductive load at
T_j =
25/125 °C
V_DS =
700
V
V_GS =
15
V
I_D =
40
A
12
16 _{R G ( Ω )} 20
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6
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