V23990-P629-L63-PM Datasheet, PDF (7/19 Pages) Vincotech – High efficiency dual boost

Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
0,1
0,01
V23990-P629-L63-PM
T1, T2
T1, T2
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
t_f
0,1
t_don
t_r
0,01
T1, T2
t_doff
t_f
t_don
t_r
0,001
0
20
40
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
15
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,014
0,012
0,01
0,008
0,006
0,004
0,002
0
0
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
15
V
4
Ω
0,001
60
I D (A)
80
0
4
8
12
16
R G (Ω) ²⁰
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
15
V
I_C =
40
A
D1, D2, D3, D4, D5, D6
t_{rr High T}
t_{rr Low T}
60
I C (A)
80
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,014
D1, D2, D3, D4, D5, D6
0,012
0,01
t_{rr High T}
0,008
t_{rr Low T}
0,006
0,004
0,002
0
0
4
8
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
40
A
15
V
12
16
R Gon (Ω) ²⁰
copyright Vincotech
7
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