V23990-P629-L63-PM Datasheet, PDF (11/19 Pages) Vincotech – High efficiency dual boost

V23990-P629-L63-PM
T1, T2
Figure 25
Safe operating area as a function
of drain-source voltage
I_D = f(V_DS)
110³
10²
100uS
10uS
100mS
10mS
1mS
10¹
DC
10⁰
T1, T2
10⁰
10¹
10²
At
D=
T_h =
V_GS =
T_j =
single pulse
80
ºC
15
V
T_jmax
ºC
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
17,5
10³
V DS (V)
T1, T2
15
12,5
10
7,5
5
2,5
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V_CE =
600
V
T_j ≤
150
ºC
Figure 26
Gate voltage vs Gate charge
V_GS = f(Qg)
16
14
12
240V
10
8
6
4
2
0
0
50
100
150
At
I_D =
50
A
T1, T2
960V
200
250 _{Qg (nC)} 300
Figure 28
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
400
375
350
325
300
275
250
225
200
175
150
125
100
75
50
25
0
12
13
14
15
16
T1, T2
17
18
V GE (V)
At
V_CE ≤
600
V
T_j =
25
ºC
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