V23990-P629-L63-PM Datasheet, PDF (1/19 Pages) Vincotech – High efficiency dual boost

flow BOOST 0
Features
● High efficiency dual boost
● Ultra fast switching frequency
● Low Inductance Layout
● 1200V IGBT and 1200V SiC diode
● Antiparallel IGBT protection diode with high current
Target Applications
● solar inverter
● V23990-P629-L63
Types
V23990-P629-L63-PM
1200V/50A
flow 0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
D7-D10
Repetitive peak reverse voltage
Forward average current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
T1,T2
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_RRM
I_FAV
I_FSM
I²t
P_tot
T_jmax
T_j=T_jmax
t_p=10ms
T_j=T_jmax
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
V_CES
I_C
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Value
Unit
1600
V
38
A
45
220
A
200
A²s
47
W
71
150
°C
1200
V
43
A
57
160
A
145
W
220
±20
V
10
µs
600
V
175
°C
copyright Vincotech
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Revision: 1