V23990-P629-L63-PM Datasheet, PDF (8/19 Pages) Vincotech – High efficiency dual boost

V23990-P629-L63-PM
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,2
0,15
0,1
0,05
T1, T2
D1, D2, D3, D4, D5, D6
Q_{rr Low T}
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
0,2
0,15
Q_{rr Low T}
0,1 _{Qrr High T}
D1, D2, D3, D4, D5, D6
0,05
0
0
At
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
25
20
15
10
5
0
0
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
15
V
4
Ω
60
I C (A)
80
0
0
4
8
12
16
R Gon ( Ω) ²⁰
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
40
A
15
V
D1, D2, D3, D4, D5, D6
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
25
D1, D2, D3, D4, D5, D6
20
15
10
5
0
60
I C (A) ⁸⁰
0
4
8
12
16
R Gon (Ω) ²⁰
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
40
A
15
V
copyright Vincotech
8
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