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| V23990-P629-F63-PM Datasheet, PDF (9/18 Pages) Vincotech – Low Inductance Layout | |||
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V23990-P629-F63-PM
datasheet
BOOST Charateristics
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
12000
dI0/dt
10000
dIrec/dt
8000
6000
4000
2000
0
0
15
30
45
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
600
V
15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
15000
12000
BOOST FWD
dI0/dt
dIrec/dt
9000
6000
3000
60
I C (A) 75
BOOST IGBT
0
0
4
8
12
At
Tj =
VR =
IF =
V GE =
25/125 °C
600
V
40
A
15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
16 R Gon ( â¦) 20
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
R th(j-s) =
tp / T
0,65
K/W
IGBT thermal model values
R (K/W)
Tau (s)
1,85E-01
5,43E-01
3,49E-01
1,22E-01
7,94E-02
1,84E-02
1,82E-02
2,92E-03
2,26E-02
5,23E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
R th(j-s) =
tp / T
1,19
K/W
FWD thermal model values
R (K/W)
Tau (s)
4,57E-02
4,5E+00
9,58E-02
8,86E-01
3,40E-01
1,49E-01
4,21E-01
4,66E-02
1,58E-01
1,05E-02
1,06E-01
2,34E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-1
100
t p (s) 10110
copyright Vincotech
9
22 Mar. 2016 / Revision 3
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