V23990-P629-F63-PM Datasheet, PDF (1/18 Pages) Vincotech – Low Inductance Layout

flow BOOST 0
Features
● High efficiency dual boost
● Ultra fast switching frequency
● Low Inductance Layout
● 1200V IGBT and 1200V SiC diode
● Antiparallel IGBT protection diode with high current
Target Applications
● solar inverter
Types
● V23990-P629-F63-PM
V23990-P629-F63-PM
datasheet
1200 V / 40 A
flow 0 12mm housing
Schematic
T _j=25°C, unless otherwise specified
Parameter
Bypass diode &
Boost IGBT protection diode
Repetitive peak reverse voltage
DC forward current
Surge (non-repetitive) forward current
I²t-value
Power dissipation
Maximum Junction Temperature
Boost IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V _RRM
I _FAV
I _FSM
I ²t
P _tot
T _jmax
DC current
t _p = 10 ms
T _j = T _jmax
V _CE
I_C
I _CRM
P _tot
V _GE
t _SC
V _CC
T _jmax
T _j = T _jmax
t _p limited by T _jmax
T _j = T _jmax
T _j ≤ 150 °C
V _GE = 15 V
T _s = 80 °C
T _c = 80 °C
T _s = 80 °C
T _c = 80 °C
T _s = 80 °C
T _c = 80 °C
T _s = 80 °C
T _c = 80 °C
Value
Unit
1600
V
34
A
45
220
A
200
A²s
42
W
63
150
°C
1200
V
36
A
47
160
A
107
W
162
±25
V
10
µs
600
V
150
°C
copyright Vincotech
1
22 Mar. 2016 / Revision 3