V23990-P629-F63-PM Datasheet, PDF (6/18 Pages) Vincotech – Low Inductance Layout

V23990-P629-F63-PM
datasheet
BOOST Charateristics
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
2,5
2
1,5
1
0,5
0
0
15
30
45
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
600
V
15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0
15
30
45
With an inductive load at
T_j =
25/125 °C
V _CE =
600
V
V _GE =
15
V
R _gon =
4
Ω
R _goff =
4
Ω
BOOST IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
2
E_{off High T}
1,5
E_{on High T}
E_{off Low T}
1
E_{off Low T}
E_{on Low T}
E_{on High T}
0,5
E_{on Low T}
0
60
I C (A) 75
0
4
8
12
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
600
V
15
V
I_C =
40
A
BOOST FWD
E_{rec Low T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
0,08
0,06
0,04
E_{rec High T}
0,02
0,00
60
I C (A) ⁷⁵
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V _CE =
600
V
V _GE =
15
V
I_C =
40
A
BOOST IGBT
16 _{R G ( Ω )} 20
BOOST FWD
E_{rec Low T}
E_{rec High T}
16 _{R G( Ω )} 20
copyright Vincotech
6
22 Mar. 2016 / Revision 3