V23990-P629-F63-PM Datasheet, PDF (8/18 Pages) Vincotech – Low Inductance Layout

V23990-P629-F63-PM
datasheet
BOOST Charateristics
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
0,4
0,3
0,2
0,1
0
At ⁰
15
30
45
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
30
25
20
15
10
5
0
0
15
30
45
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
15
V
4
Ω
BOOST FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
0,25
0,2
Q_{rr Low T}
0,15
Q_{rr High T}
0,1
0,05
60
I C (A) 75
0
0
4
8
12
At
T_j =
VR =
IF =
V GE =
25/125 °C
600
V
40
A
15
V
BOOST FWD
I_{RRM Low T}
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
30
25
I_{RRM High T}
20
I_{RRM Low T}
15
10
5
0
60
I C (A) ⁷⁵
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
40
A
15
V
BOOST FWD
Q_{rr Low T}
Q_{rr High T}
16 _{R Gon ( Ω)} 20
BOOST FWD
16
R Gon ( Ω) ²⁰
copyright Vincotech
8
22 Mar. 2016 / Revision 3