V23990-P629-F63-PM Datasheet, PDF (3/18 Pages) Vincotech – Low Inductance Layout

Parameter
Bypass diode &
Boost IGBT protection diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance junction to sink
Thermal resistance junction to case
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance junction to sink
Thermal resistance junction to case
Boost FWD
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance junction to sink
Thermal resistance junction to case
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
V23990-P629-F63-PM
datasheet
Characteristic Values
Symbol
Conditions
V _GE [V]
or
V _GS [V]
V _r [V]
or
V _CE [V]
or
V _DS [V]
I _C [A]
or
I _F [A]
or
I _D [A]
T _j [°C]
Value
Unit
Min Typ Max
V_F
V _to
r_t
I_r
R _th(j-s)
R _th(j-c)
Thermal grease
thickness ≤ 50 um
λ = 1 W/mK
25
25
125
25
25
125
25
25
125
1600
25
125
1,15
1,11
0,92
0,82
0,009
0,011
1,67
1,10
1,21
0,05
V
V
Ω
mA
K/W
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
R _th(j-c)
V CE = V GE
15
0
±25
R goff = 4 Ω
15
R gon = 4 Ω
f = 1 MHz
0
±15
Thermal grease
thickness ≤ 50 um
λ = 1 W/mK
1200
0
600
30
0,00025
25
40
25
125
25
125
25
125
25
125
25
125
25
40
125
25
125
25
125
25
125
25
600
40
25
V_F
I _rm
I _RRM
t _rr
Q _rr
R gon = 4 Ω
15
E _rec
( di _rf/dt )_max
R _th(j-s)
R _th(j-c)
Thermal grease
thickness ≤ 50 um
λ = 1 W/mK
22,5
25
125
1200
25
125
25
125
25
125
600
40
25
125
25
125
25
125
R
25
Δ _R/R
P
R 100 = 1486 Ω
100
25
25
B(25/50) Tol. ±3 %
25
B(25/100) Tol. ±3 %
25
3,5
5,5
7,5
V
2,89
3,2
V
3,09
1
mA
±250
nA
none
Ω
27
26
10
10
166
193
11
34
0,41
0,51
0,76
1,45
3200
ns
mWs
370
pF
125
220
nC
0,65
0,43
K/W
1,67
1,8
V
2,28
600
µA
24
23
10
10
0,23
0,12
0,075
0,015
8579
6425
A
ns
µC
mWs
A/µs
1,19
0,78
K/W
22000
Ω
-5
+5
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright Vincotech
3
22 Mar. 2016 / Revision 3