V23990-P629-F63-PM Datasheet, PDF (7/18 Pages) Vincotech – Low Inductance Layout

V23990-P629-F63-PM
datasheet
BOOST Charateristics
Figure 9
Typical switching times as a
function of collector current
t = f(I _D)
1
t_doff
0,1
t_don
t_f
0,01
t_r
0,001
0
15
30
45
With an inductive load at
T_j =
125
°C
V _CE =
600
V
V _GE =
15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,015
0,012
0,009
0,006
0,003
0
0
15
30
45
R (K/W)
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
15
V
4
Ω
BOOST IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1
0,1
0,01
BOOST IGBT
t_doff
t_don
t_r
t_f
60
I D (A) ⁷⁵
0,001
0
4
8
With an inductive load at
T_j =
125
°C
V _CE =
600
V
V _GE =
15
V
I_C =
40
A
12
16
20
R G ( Ω)
BOOST FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,015
t_{rr High T}
t_{rr Low T}
0,012
0,009
0,006
0,003
0
60
I C (A) ⁷⁵
R (K/W⁰)
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
40
A
15
V
BOOST FWD
t_{rr High T}
t_{rr Low T}
16 R Gon ( Ω) 20
copyright Vincotech
7
22 Mar. 2016 / Revision 3