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| 10-FZ06NRA045FH01 Datasheet, PDF (9/27 Pages) Vincotech – reactive power capability | |||
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FZ06NRA045FH01
preliminary datasheet
Buck
Figure 17
Typical rate of fall of forward and reverse recovery current
as a function of collector current
dI0/dt,dIrec/dt = f(Ic)
25000
FRED
20000
dIrec/dtLow T
15000
10000
5000
dIrec/dtHigh T
dIo/dtLow T
di0/dtHigh T
0
0
10
20
30
40
50 I C (A) 60
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
15
V
8
â¦
Figure 19
IGBT transient thermal impedance as a function of pulse width
ZthJH = f(tp)
101
MOSFET
Figure 18
Typical rate of fall of forward and reverse recovery current
as a function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
30000
25000
dIrec/dtLow T
FRED
20000
15000
dIrec/dtHigh T
10000
5000
dI0/dtHigh T
0
0
8
16
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
30
A
15
V
dI0/dtLow T
24
32
R gon (W) 40
Figure 20
FRED transient thermal impedance as a function of pulse width
ZthJH = f(tp)
101
FRED
100
100
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
0,56
10-3
K/W
IGBT thermal model values
R (C/W) Tau (s)
0,04
8,6E+00
0,13
1,4E+00
0,23
2,2E-01
0,09
3,6E-02
0,03
5,0E-03
0,05
2,6E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,95
K/W
FRED thermal model values
R (C/W) Tau (s)
0,06
7,9E+00
0,24
1,0E+00
0,90
1,4E-01
0,50
3,1E-02
0,17
3,7E-03
0,09
5,7E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
copyright Vincotech
9
Revision: 2
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