10-FZ06NRA045FH01 Datasheet, PDF (3/27 Pages) Vincotech – reactive power capability

FZ06NRA045FH01
preliminary datasheet
Parameter
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
I_RRM
t_rr
Q_rr Rgon=8 Ω
di(rec)max
/dt
Erec
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
30
350
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,25
2,7
1,66
V
57
82
A
14
22
ns
0,43
0,99
μC
16743
15517
A/μs
0,070
0,137
mWs
1,95
K/W
R_ds(on)
V_(GS)th
I_gss
I_dss
t_d(ON)
t_r
t_d(OFF)
t_f
Rgon=8 Ω
Rgoff=8 Ω
E_on
E_off
Q_g
10
44
Tj=25°C
Tj=125°C
42
83
mΩ
VDS=VGS VDS=VGS 0,003
Tj=25°C
Tj=125°C
2,1
3
3,9
V
20
0
Tj=25°C
Tj=125°C
200
nA
0
600
Tj=25°C
Tj=125°C
25
μA
Tj=25°C
30
Tj=125°C
31
Tj=25°C
8
Tj=125°C
8
Tj=25°C
269
ns
15
350
30
Tj=125°C
Tj=25°C
295
7
Tj=125°C
140
Tj=25°C
0,161
Tj=125°C
Tj=25°C
0,265
0,085
mWs
Tj=125°C
0,104
150
190
Q_gs
15
350
30
Tj=25°C
34
nC
Q_gd
51
C_iss
f=1MHz
0
100
C_oss
6800
Tj=25°C
pF
320
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
0,56
K/W
copyright Vincotech
3
Revision: 2