10-FZ06NRA045FH01 Datasheet, PDF (8/27 Pages) Vincotech – reactive power capability

Buck
FZ06NRA045FH01
preliminary datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
1,50
1,20
FRED
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,5
1,2
0,90
0,9
Q_{rr Low T}
0,60
0,6
0,30
0,3
0,00
At ⁰
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
8
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
100
80
I_{RRM High T}
60
40
20
0
0
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
8
Ω
0
40
50 I C (A) 60
0
8
16
24
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
30
A
15
V
FRED
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
120
100
80
I_{RRM Low T}
60
40
20
0
40
50 I C (A) 60
0
8
16
24
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
30
A
15
V
FRED
Q_{rr High T}
Q_{rr Low T}
32 R g on ( Ω) 40
FRED
I_{RRM High T}
I_{RRM Low T}
32
R gon (W) 40
copyright Vincotech
8
Revision: 2