10-FZ06NRA045FH01 Datasheet, PDF (6/27 Pages) Vincotech – reactive power capability

Buck
FZ06NRA045FH01
preliminary datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,600
0,500
0,400
0,300
0,200
E_{off Low T}
0,100
0,000
0
10
20
30
40
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
15
V
8
Ω
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,20
MOSFET
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,600
E_{on High T}
E_{off High T}
0,500
0,400
0,300
E_{on High T}
E_{on Low T}
0,200
0,100
50 I C (A) 60
0,000
0
8
16
24
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
15
V
30
A
FRED
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,20
0,16
0,16
0,12
E_{rec High T}
0,12
0,08
0,08
0,04
0,04
0,00
0
0,00
10
20
30
40
50 I C (A) 60
0
8
16
24
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
15
V
R_gon =
8
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
15
V
I_C =
30
A
MOSFET
E_{off High T}
E_{off Low T}
E_{on Low T}
32
R G (W) 40
FRED
E_{rec High T}
E_{rec Low T}
32
R G (W) 40
copyright Vincotech
6
Revision: 2