10-FZ06NRA045FH01 Datasheet, PDF (15/27 Pages) Vincotech – reactive power capability

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FZ06NRA045FH01
preliminary datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
9,00
8,00
7,00
6,00
5,00
4,00
3,00
2,00
1,00
0,00
At ⁰
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
8
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
160
140
120
100
80
60
40
20
0
0
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
8
Ω
FRED
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
7
Q_{rr High T}
6
5
4
3
Q_{rr Low T}
2
1
0
40
50 I C (A) 60
0
8
16
24
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
30
A
15
V
FRED
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
160
140
I_{RRM High T}
120
I_{RRM Low T}
100
80
I_{RRM Low T}
60
40
20
0
40
50 I C (A) 60
0
8
16
24
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
30
A
15
V
FRED
Q_{rr High T}
Q_{rr Low T}
32
R g on ( Ω) 40
FRED
32
R gon (W) 40
copyright Vincotech
15
Revision: 2