10-FZ06NRA045FH01 Datasheet, PDF (14/27 Pages) Vincotech – reactive power capability

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
10
1
t_f
0,1
t_don
0,01
Boost
FZ06NRA045FH01
preliminary datasheet
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
10
t_doff
1
0,1
t_r
0,01
IGBT
t_doff
t_don
t_f
t_r
0,001
0
0,001
10
20
30
40
50 I C (A) 60
0
8
16
24
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
15
V
8
Ω
8
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
15
V
30
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,070
0,060
0,050
0,040
0,030
0,020
0,010
FRED
t_{rr High T}
t_{rr Low T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,080
0,070
0,060
0,050
0,040
0,030
0,020
0,010
0,000
0
0,000
10
20
30
40
50 I C (A) 60
0
8
16
24
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
8
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
30
A
15
V
32
R G( Ω ) 40
FRED
t_{rr High T}
t_{rr Low T}
32 R gon (W) 40
copyright Vincotech
14
Revision: 2