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| 10-FY12M3A040SH-M749F08 Datasheet, PDF (9/26 Pages) Vincotech – 3 phase mixed voltage component topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
12000
9000
6000
3000
10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
Buck
Half Bridge IGBT and Neutral Point FWD
dIrec/dt T
dIo/dt T
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
dIrec/dt T
dI0/dt T
12000
FWD
9000
6000
3000
0
0
15
30
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
0
45
I C (A)
60
0
10
20
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
28
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
30
R gon ( â¦) 40
FWD
100
100
D = 0,5
0,2
10-1
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
110012
10-2
10-5
10-4
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-3
10-2
10-1
100
t p (s) 101
At
At
D=
RthJH =
tp / T
1,27
K/W
D=
RthJH =
tp / T
2,34
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,18
0,64
0,30
0,10
0,06
Tau (s)
8,2E-01
1,3E-01
4,8E-02
9,3E-03
8,0E-04
R (C/W)
0,11
0,36
1,41
0,28
0,19
Tau (s)
2,4E+00
3,0E-01
6,5E-02
1,1E-02
1,6E-03
copyright Vincotech
9
Revision: 3
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