10-FY12M3A040SH-M749F08 Datasheet, PDF (12/26 Pages) Vincotech – 3 phase mixed voltage component topology

10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
Figure 1
Typical output characteristics
I_C = f(V_CE)
100
Boost
Neutral Point IGBT and Half Bridge FWD
IGBT
Figure 2
Typical output characteristics
I_C = f(V_CE)
100
IGBT
80
80
60
60
40
40
20
20
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
50
4
V CE (V) ₅
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
125
°C
7 V to 17 V in steps of 1 V
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
80
4
V CE (V) ₅
FWD
40
30
20
10
0
0
At
t_p =
V_CE =
2
250
10
T_j = T_jmax-25°C
T_j = 25°C
4
6
8
10 V _GE (V) 12
µs
V
60
40
20
0
0
At
t_p =
1
2
250
µs
T_j = 25°C
T_j = T_jmax-25°C
3
4
V F (V) 5
copyright Vincotech
12
Revision: 3