10-FY12M3A040SH-M749F08 Datasheet, PDF (15/26 Pages) Vincotech – 3 phase mixed voltage component topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
4
3
2
1
10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
Boost
Neutral Point IGBT and Half Bridge FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
4
Q_{rr High T}
3
Q_{rr Low T}
2
1
FWD
Q_{rr High T}
Q_{rr Low T}
0
0
At
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
16
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
60
50
40
30
20
10
0
0
15
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
16
Ω
0
40
50 _{I C (A)} 60
0
15
30
45
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
28
A
±15
V
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
100
80
60
40
I_{RRM High T}
20
I_{RRM Low T}
45
I C (A)
60
0
0
15
30
45
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
28
A
±15
V
60
R gon ( Ω) ⁷⁵
FWD
60
75
R gon ( Ω)
copyright Vincotech
15
Revision: 3