10-FY12M3A040SH-M749F08 Datasheet, PDF (8/26 Pages) Vincotech – 3 phase mixed voltage component topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
1,5
1,2
0,9
0,6
0,3
0,0
0
At
15
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
8
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
60
50
40
30
20
10
0
0
15
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
8
Ω
10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
Buck
Half Bridge IGBT and Neutral Point FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,2
Q_{rr High T}
0,9
0,6
FWD
Q_{rr High T}
Q_{rr Low T}
0,3
45
I C (A)
60
0,0
0
10
20
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
28
A
±15
V
Q_{rr Low T}
30
R gon ( Ω) 40
FWD
I_{RRM High T}
I_{RRM Low T}
45
I C (A)
60
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
60
50
40
30
20
10
0
0
At
T_j =
V_R =
I_F =
V_GE =
I_{RRM High T}
I_{RRM Low T}
10
20
25/125 °C
350
V
28
A
±15
V
FWD
30
R gon ( Ω) 40
copyright Vincotech
8
Revision: 3