10-FY12M3A040SH-M749F08 Datasheet, PDF (3/26 Pages) Vincotech – 3 phase mixed voltage component topology

Parameter
Half Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Neutral Point FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=8 Ω}
±15
t_f
Rgon=8 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
±15
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
350
25
960
0,0015
40
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
28
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
40
Tj=25°C
5,2
5,8
6,4
V
1,7
1,96
2,4
2,29
V
0,005
mA
120
nA
none
70
72
13
15
166
217
45
79
0,31
0,52
0,67
1,16
2300
Ω
ns
mWs
150
pF
135
185
nC
1,27
K/W
V_F
30
I_r
600
I_RRM
t_rr
Q_rr Rgoff=8 Ω
±15
350
28
di(rec)max
/dt
Erec
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,28
2,5
1,74
V
100
500
µA
32
41
A
18
40
ns
0,32
0,92
µC
8818
3866
A/µs
0,03
0,12
mWs
2,34
K/W
copyright Vincotech
3
Revision: 3