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| V23990-K428-A60-PM Datasheet, PDF (8/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology | |||
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V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
10000
8000
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
10000
8000
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
6000
6000
4000
4000
2000
2000
0
0
20
40
60
80
I C (A) 100
0
0
10
20
30
40
50
60 R gon ( ⦠) 70
At
Tj =
VCE =
VGE =
Rgon =
25/1501 °C
600
V
±15
V
16
â¦
At
Tj =
VR =
IF =
VGE =
25/1501 °C
600
V
50
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,75
K/W
IGBT thermal model values
Thermal grease
R (C/W) Tau (s)
0,03
1,6E+01
0,09
1,2E+00
0,29
2,1E-01
0,24
7,1E-02
0,09
1,5E-02
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100 t p (s)
1011 0
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,93
K/W
FWD thermal model values
Thermal grease
R (C/W) Tau (s)
0,05
3,4E+00
0,10
5,9E-01
0,37
1,2E-01
0,25
3,7E-02
0,13
8,1E-03
0,04
9,0E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 10110
Copyright by Vincotech
8
Revision: 1.1
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