V23990-K428-A60-PM Datasheet, PDF (7/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
18
Q_rr
15
12
9
6
Q_rr
3
0
0
At
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/1501 °C
600
V
±15
V
16
Ω
75
I C (A) ¹⁰⁰
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
15
12
Q_rr
9
6
Q_rr
3
0
0
16
32
48
64 R _gon ( Ω)
80
At
T_j =
V_R =
I_F =
V_GE =
25/1501 °C
600
V
50
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
125
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
125
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
75
75
50
25
0
0
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/1501 °C
600
V
±15
V
16
Ω
50
I_RRM
I_RRM
25
I_RRM
I_RRM
0
75
I C (A) 100
0
16
32
48
64 _{R gon ( Ω )}
80
At
T_j =
V_R =
I_F =
V_GE =
25/1501 °C
600
V
50
A
±15
V
Copyright by Vincotech
7
Revision: 1.1