V23990-K428-A60-PM Datasheet, PDF (10/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
10²
10¹
10⁰
10^-1
T1,T2,T3,T4,T5,T6,T7 IGBT
100uS
1mS
10mS
100mS
DC
10⁰
10¹
10²
At
D=
T_h =
V_GE =
T_j =
single pulse
80
ºC
±15
V
T_jmax
ºC
10³
V CE (V)
Figure 27
T1,T2,T3,T4,T5,T6,T7 IGBT
Short circuit safe operating area (SCSOA)
I_c = f(V_CE)
x¹¹
x10
x9
x8
x7
x₆
x₅
x4
x3
x2
x1
x₀
0
200
400
600
800
1000
1200
1400
V GE (V)
At
V_CE ≤
850
V
T_j ≤
150
ºC
V_GE=
±15
V
t_SC ≤
10
µS
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
20
18
16
14
12
10
8
6
4
2
0
0
20
40
60
At
I_C =
50
A
T1,T2,T3,T4,T5,T6,T7 IGBT
240V
960V
80
100
120
140
160
Q g (nC)
Figure 28
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
x7
x₆
x⁵
x4
x3
x₂
x1
x0
13
14
15
V_CE=
800
V
T_j=
150
ºC
16
V _GE (V) ¹⁷
Copyright by Vincotech
10
Revision: 1.1