V23990-K428-A60-PM Datasheet, PDF (6/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
t_doff
t_doff
0,10
t_don
0,10
t_f
t_f
t_r
t_don
0,01
0,01
0,00
0
25
50
With an inductive load at
T_j =
151
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
16
Ω
R_goff =
16
Ω
75
I C (A) 100
t_r
0,00
0
16
32
With an inductive load at
T_j =
151
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
50
A
T1,T2,T3,T4,T5,T6,T7 IGBT
48
64
80
RG(Ω )
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
1,5
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
1,5
D1,D2,D3,D4,D5,D6,D7 FWD
1,2
1,2
t_rr
t_rr
0,9
0,9
0,6
0,6
t_rr
t_rr
0,3
0,3
0,0
0
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/1501 °C
600
V
±15
V
16
Ω
75
I C (A) ¹⁰⁰
0,0
0
16
32
48
64 _{R gon ( Ω )}
80
At
T_j =
V_R =
I_F =
V_GE =
25/1501 °C
600
V
50
A
±15
V
Copyright by Vincotech
6
Revision: 1.1