V23990-K428-A60-PM Datasheet, PDF (5/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
12
9
6
3
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0
0
25
50
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/1501 °C
600
V
±15
V
16
Ω
16
Ω
75
I C (A) 100
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
12
10
8
6
4
2
0
0
16
32
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/1501 °C
600
V
±15
V
50
A
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
48
64
80
RG(Ω)
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
8
D1,D2,D3,D4,D5,D6,D7 FWD
E_rec
6
4
E_rec
2
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
8
D1,D2,D3,D4,D5,D6,D7 FWD
6
E_rec
4
2
E_rec
0
0
25
50
With an inductive load at
T_j =
25/1501 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
16
Ω
0
75
I C (A) ¹⁰⁰
0
16
32
48
64 R _G ( Ω ) 80
With an inductive load at
T_j =
25/1501 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
50
A
Copyright by Vincotech
5
Revision: 1.1