V23990-K428-A60-PM Datasheet, PDF (4/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I_C = f(V_CE)
120
100
80
60
40
20
0
0
1
2
At
t_p =
T_j =
V_GE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6,T7 IGBT
3
4
V CE (V)
5
Figure 2
Typical output characteristics
I_C = f(V_CE)
120
100
80
60
40
20
0
0
1
2
At
t_p =
T_j =
V_GE from
250
µs
151
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6,T7 IGBT
3
4
V CE (V)
5
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
50
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
100
40
80
30
60
20
40
10
20
0
0
0
2
4
6
8
10 V _GE (V) 12
0
1
2
At
T_j =
t_p =
V_CE =
25/1501 °C
250
µs
10
V
At
T_j =
25/1501 °C
t_p =
250
µs
D1,D2,D3,D4,D5,D6,D7 FWD
3
4
V F (V) ⁵
Copyright by Vincotech
4
Revision: 1.1