10-FY06BIA050SG-M523E18 Datasheet, PDF (8/27 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
10,00
1,00
t_doff
0,10
t_don
0,01
t_r
10-FY06BIA050SG-M523E18
preliminary datasheet
H-Bridge
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
10,00
1,00
IGBT
t_doff
0,10
t_don
t_r
t_f
t_f
0,01
0,00
0
25
50
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
15
V
R_gon =
4
Ǒ
R_goff =
4
Ǒ
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,05
0,04
0,03
0,02
0,01
0,00
0
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
15
V
4
Ǒ
75
100
I_C(A)
0,00
0
8
16
24
32
40
R_G(Ω)
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
15
V
I_C =
50
A
FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,10
0,08
0,06
0,04
t_{rr Low T}
t_{rr High T}
0,02
75
100
I_C(A)
0,00
0
8
16
24
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
50
A
15
V
FWD
t_{rr High T}
t_{rr Low T}
32
40
R_gon(Ω)
Copyright by Vincotech
8
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