10-FY06BIA050SG-M523E18 Datasheet, PDF (14/27 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
2
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
0
25
50
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
400
V
15
V
4
Ǒ
4
Ǒ
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,25
0,2
0,15
0,1
0,05
0
0
25
50
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
400
V
15
V
4
Ǒ
4
Ǒ
10-FY06BIA050SG-M523E18
preliminary datasheet
INPUT BOOST
BOOST IGBT
E_{on High T}
EE_{oofnf HLiogwh T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
5
4
3
2
1
0
75
100
0
I_C(A)
10
20
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
400
V
15
V
50
A
BOOST FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,25
0,2
0,15
0,1
E_{rec Low T}
0,05
0
75
100
0
I_C(A)
10
20
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
400
V
15
V
50
A
BOOST IGBT
E_{on High T}
E_{on Low T}
E_{off Low T}
E_{off High T}
30
40
R_G (Ω)
BOOST FWD
E_{rec High T}
E_{rec Low T}
30
R_G(Ω) ⁴⁰
Copyright by Vincotech
14
Revision: 1