10-FY06BIA050SG-M523E18 Datasheet, PDF (2/27 Pages) Vincotech – Low inductive 12mm flow1 package

Tj=25°C, unless otherwise specified
Parameter
Input Boost Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Input Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
H-Bridge IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
H-Bridge Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
DC link Capacitor
Max.DC voltage
Copyright by Vincotech
10-FY06BIA050SG-M523E18
preliminary datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
19
A
25
20
A
39
W
47
150
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_CE
I_C
Icpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
23
A
27
120
A
40
W
60
150
°C
600
V
39
A
52
150
A
83
W
126
±20
V
5
µs
400
V
175
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_MAX
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Tc=25°C
600
V
23
A
31
120
A
40
W
60
150
°C
630
V
2
Revision: 1